Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique.
Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera :
- Stability and Reliability of Lateral GaN Power Field-Effect Transistors
Source : ieeexplore.ieee.org – 2020-05-04
Lire la suite - Packaging for SiC power device
Source : ieeexplore.ieee.org – 2020-05-03
Lire la suite - A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution
Source : ieeexplore.ieee.org – 2020-05-03
Lire la suite - Thermal Characterization of SiC Modules for Variable Frequency Drives
Source : ieeexplore.ieee.org – 2020-05-03
Lire la suite - A Novel Method for Monitoring the Junction Temperature of SiC MOSFET On-line Based on On-state Resistance
Source : ieeexplore.ieee.org – 2020-05-03
Lire la suite - Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies
Source : ieeexplore.ieee.org – 2020-05-03
Lire la suite - Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs
Source : ieeexplore.ieee.org – 2020-05-03
Lire la suite - Reliability of SiC MOSFET with Danfoss Bond Buffer Technology in Automotive Traction Power Modules
Source : ieeexplore.ieee.org – 2020-05-03
Lire la suite - Transient thermal dynamics of GaN HEMTs
Source : ieeexplore.ieee.org – 2020-05-02
Lire la suite - Transphorm introduces SuperGaN power FETs with launch of Gen IV GaN platform – Semiconductor Today
Source : www.semiconductor-today.com – 2020-04-14
Lire la suite - Transphorm Introduces SuperGaN™ Power FETs with Launch of Gen IV GaN Platform – Yahoo Finance
Source : finance.yahoo.com – 2020-04-14
Lire la suite