Raytheon has been awarded a three-year, two-phase contract from DARPA to develop ultra-wide bandgap semiconductors based on diamond and aluminum nitride.
Both of these also have high thermal conductivity – exceptionally high in the case of diamond.
The materials will “revolutionise semiconductor electronics with increased power delivery and thermal management in sensors and other electronic applications”, said the company, which is part of RDX.
Pour en savoir plus : Diamond and AlN semiconductors for RF devices