Engineers from China are claiming to have developed a simple, low-cost approach based on oxygen plasma treatment to improve the reliability of p-GaN gate HEMTs.
According to these researchers from Southern University of Science and Technology, their process extends the lifetime of Schottky-type p-GaN HEMTs by reducing the electric field in this device through compensation of magnesium acceptors.
This breakthrough could strengthen the competitiveness of Schottky-type p-GaN HEMTs, which offer excellent electrical efficiency and are already winning deployment in a number of applications, including data centres, electric vehicles and consumer electronics.
Pour en savoir plus : Improving HEMT reliability with oxygen plasma treatment