SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has announced a family of 1700V SiC MOSFETs designed to meet the needs of medium-voltage high-power conversion applications, such as photovoltaic and wind inverters, energy storage, electric vehicle (EV) and road-side charging, uninterruptable power supplies, and induction heating/welding.
The high-speed QSiC 1700V switching planar D-MOSFETs enable more compact system designs at large scale, with higher power densities and lower system costs. They feature a reliable body diode, capable of operation at up to 175oC, with all components tested to beyond 1900V, and UIL avalanche tested to 600mJ.
Pour en savoir plus : SemiQ launches QSiC 1700V series of high-reliability, low-loss SiC MOSFETs