The fluctuation of the threshold voltage (Vth) presents a challenge while monitoring electrical drift in reliability studies of GaN HEMTs. While technologies, such as ohmic p-GaN, may lessen V th fluctuations, the issue of recoverable charge trapping still remains....
Santa Clara, CA and Kyoto, Japan, Dec. 12, 2024 (GLOBE NEWSWIRE) — ROHM Semiconductor today announced the adoption of its PMICs in power reference designs focused on the next-generation cockpit SoCs Dolphin3 (REF67003) and Dolphin5 (REF67005) by Telechips, a...
Les matériaux électroactifs organiques, susceptibles de présenter de bonnes propriétés des couplages électromécaniques, ouvrent la voie à de nombreuses applications d’actionneurs et/ou capteurs hautement intégrables aux structures. Cela permettra à terme d’ajouter...
In this paper, we review the gate reliability of the GaN MOSc-HEMT as well as the specific method to address the peculiarities of these transistors. The long term forward gate TDDB will be explored showing the impact of the gate recession and gate material on the...
We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low background doping, and kV-range breakdown voltages; avalanche...
