The traditional bearing fault diagnosis methods have complex operation processes and poor generalization ability, while the diagnosis accuracy of the existing intelligent diagnosis methods needs to be further improved. Therefore, a novel fault diagnosis approach named...
L’objectif principal de cette thèse est d’étudier les phénomènes de piégeage présents dans la structure des transistors à haute mobilité électronique (HEMT) en Nitrure de Gallium (GaN) des deux technologies GH25 et GL2D. Le travail présenté dans ce mémoire...
Navitas Semiconductor has announced the launch of GaNFast power ICs with GaNSense technology. GaNSense technology integrates critical, real-time, autonomous sensing and protection circuits which further improves Navitas’ industry-leading reliability and robustness...
GaN power IC specialist Navitas Semiconductor has launched its third-generation power ICs with GaNSense technology. GaNSense integrates critical, real-time, autonomous sensing and protection circuits that further improves reliability and robustness, while increasing...
BorgWarner will be providing a new, high-voltage silicon carbide (SiC) inverter to a large German automaker for implementation in its next-generation electric vehicles. The BorgWarner 800V SiC inverter with proprietary power switches provides a more compact and...
