U.S. military researchers are asking integrated circuit experts at HRL Laboratories LLC in Malibu, Calif., to refine RF and microwave circuitry for aerospace and defense applications.Officials of the U.S. Defense Advanced Research Projects Agency (DARPA) in Arlington,...
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Highly Reliable GaN-MOSFETs with High Channel Mobility Gate by...
Currently, defects existing in materials and at the interface are the main bottlenecks limiting the manufacture of high-performance electron devices, especially semiconductor devices where the performance and reliability are affected by these defects. Therefore, high...
Gallium Nitride shows huge potential in power electronics applications thanks to the superior intrinsic material properties which result in improved performance both at device level and system level. Great effort has been taken in recent years to industrialize GaN...
This brief first reports the behaviors of three different kinds of 650-V commercial normally-off GaN devices under repetitive reverse freewheeling stress, and the mechanisms are illustrated by experiments and mix-mode technology computer-aided design simulations....
