Gallium Nitride shows huge potential in power electronics applications thanks to the superior intrinsic material properties which result in improved performance both at device level and system level. Great effort has been taken in recent years to industrialize GaN...
This brief first reports the behaviors of three different kinds of 650-V commercial normally-off GaN devices under repetitive reverse freewheeling stress, and the mechanisms are illustrated by experiments and mix-mode technology computer-aided design simulations....
This brief first reports the behaviors of three different kinds of 650-V commercial normally-off GaN devices under repetitive reverse freewheeling stress, and the mechanisms are illustrated by experiments and mix-mode technology computer-aided design simulations....
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Saab utilise un nouveau radar de chasse GaN Source :...
In this paper, authors developed miniaturizeddouble side cooling packaging for SiC (silicon carbide) highpower inverter module using new material solutions towithstand high temperature condition over 220oC. Instead ofconventional thick wire bonding on the device, the...
