Although GaN high electron mobility transistors (HEMTs) are one of the most promising semiconductor technologies for high power and high frequency applications, high device temperatures often lead to degraded performance and reliability. Most reports on the thermal...
For various pulsed power electronics like, metal oxide semiconductor field-effect transistor (MOSFET), insulating gate bipolar transistor (IGBT), Gate turn-off thyristor (GTO), Integrated gate-commutated thyristor (IGCT), heat loads are often in the range of 10W/cm2...
This work describes the development of a single phase water-cooled microfluidic heat exchanger for cooling very high heat flux electronics. The heat sink was designed for a unique additive manufacturing process capable of manufacturing millimeter-scale metallic parts...
A broadband aperture-coupled magneto-electric (ME) dipole antenna array designed for metallic additive manufacturing (AM) is proposed. The proposed array antenna that operates in Ka-band consists of four radiating elements, a power divider and a flange for connecting...
Three GaN switches from Power Integrations support 75W power supply adapter designs without a heatsink. Previous devices supported 55W designs.The three InnoSwitch3-MX isolated switcher chips work with the InnoMux controller for higher efficiency 75W power supplies...
