Transphorm Inc.— the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified high voltage gallium nitride (GaN) power semiconductors — today announced availability of its Gen IV GaN platform. Transphorm’s latest...
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Transphorm and Microchip Combine High Reliability GaN and Digital...
The Texas Instruments LMG341xR050 is a gallium nitride (GaN) power stage with an integrated gate driver and robust protection features, the 600V, 50milliohm device enables designers to realise new levels of efficiency in their power conversion systems, which includes...
Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified high-voltage gallium nitride (GaN) field-effect transistors (FETs) — says that Hangzhou Zhongheng Electric Co Ltd (HZZH) has developed an...
A room-temperature bonding technique for integrating wide-bandgap materials such as gallium nitride (GaN) with thermally conducting materials such as diamond could boost the cooling effect on GaN devices and facilitate better performance through higher power levels,...
