Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts device performance and reliability. Under nominal operating conditions, a hot-spot in the device channel develops under the drain side corner of the gate due to a concentration of...
The increasing demand for higher data rates in telecommunications and higher resolution in industrial systems is pushing the frequency of operation higher for the electronics that support them. Many of these systems operate over a wide frequency spectrum and further...
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and reliability of GaN-based...
The 11th Call for Proposals (CfP11) was published on 14 January via the European Commission’s Funding & Tender Opportunities Portal. CfP11 has a budget of €45 million for 35 Topics, including 4 Thematic Topics. The deadline to apply is 28 April 2020 (17:00...
Transphorm, designer and manufacturer of the first JEDEC and AEC-Q101 qualified high voltage gallium nitride (GaN) power semiconductors—has confirmed that customer AES Aircraft Elektro/Elektronik System GmbH has released its first 650 V GaN-based power supplies....
