Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique.
Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera :
- Highly Reliable GaN-MOSFETs with High Channel Mobility Gate by Selective-Area Crystallization
Source : ieeexplore.ieee.org – 2020-08-18
Lire la suite - Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs
Source : ieeexplore.ieee.org – 2020-08-18
Lire la suite - Development of a High Power Density Drive System for Unmanned Aerial Vehicles
Source : ieeexplore.ieee.org – 2020-08-10
Lire la suite - Gate Reliability and its Degradation Mechanism in the Normally-off High Electron Mobility Transistors with Regrown p-GaN Gate
Source : ieeexplore.ieee.org – 2020-08-10
Lire la suite - The Challenges For Electromagnetic Diagnosis And Control of Power Devices using Wide-Band Gap Semi-conductors
Source : ieeexplore.ieee.org – 2020-08-06
Lire la suite - Low temperature defect passivation technology for semiconductor electronic devices—supercritical fluids treatment process
Source : www.scopus.com – 2020-08-01
Lire la suite