Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique.
Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera :
- Investigation of reliability of NO nitrided SiC(1100) MOS devices
Source : ieeexplore.ieee.org – 2022-05-02
Lire la suite - Characteristic Degradation of Power MOSFETs by X-Ray Irradiation and Their Recovery
Source : ieeexplore.ieee.org – 2022-05-02
Lire la suite - Power Cycling Reliability of SiC MOSFETs in Discrete and Module Packages
Source : ieeexplore.ieee.org – 2022-05-02
Lire la suite - Space-rated 120-V dc-dc converters feature GaN technology
Source : www.powerelectronictips.com – 2022-04-27
Lire la suite - Navitas GaN IC Drives Vivo Foldable Phone
Source : powerelectronicsworld.net – 2022-04-27
Lire la suite - Characterization of Partial Discharges in High-frequency Transformer under PWM Pulses
Source : ieeexplore.ieee.org – 2022-04-26
Lire la suite - Comparative Evaluation and Analysis of Packaging Material System and Parallel Package Method Based on Interleaved Planar SiC Power Module
Source : ieeexplore.ieee.org – 2022-04-14
Lire la suite - Influence of Driving Circuit Parameters and Layout Compactness on the Optimum Selection of Gate-Source Voltage Test Point for SiC MOSFETs
Source : ieeexplore.ieee.org – 2022-04-14
Lire la suite - 350-V GaN Transistor: 20X Smaller than Comparable Silicon and Lower Cost – Electronic Design
Source : www.electronicdesign.com – 2022-04-14
Lire la suite - Study on ESD Protection Device Based on 4H-SiC GGNMOS with Improved Snapback Characteristics
Source : ieeexplore.ieee.org – 2022-04-11
Lire la suite - GaN HEMTs feature breakthrough withstand gate voltage
Source : www.electropages.com – 2022-03-29
Lire la suite - SiC power devices enable new levels of efficiency and reliability
Source : www.electropages.com – 2022-03-29
Lire la suite - GaN & SiC Power Semiconductors: Why These Devices Are Gaining Popularity
Source : powerelectronicsworld.net – 2022-03-28
Lire la suite